FQH8N100C - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQH8N100C
Manufacturer	Fairchild Semiconductor
File Size	1.11 MB
Description	MOSFET
Datasheet	FQH8N100C Datasheet
Additional preview pages of the FQH8N100C datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

8 A, 1000 V, RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V.
Low Gate Charge (Typ. 53 nC).
Low Crss (Typ. 16 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 2.

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Published: Jan 16, 2017 |