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FQH8N100C - MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 8 A, 1000 V, RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V.
  • Low Gate Charge (Typ. 53 nC).
  • Low Crss (Typ. 16 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQH8N100C — N-Channel QFET® MOSFET FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.45 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. December 2013 Features • 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 53 nC) • Low Crss (Typ.