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FQH8N100C Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQH8N100C — N-Channel QFET® MOSFET FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 8 A, 1000 V, RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V.
  • Low Gate Charge (Typ. 53 nC).
  • Low Crss (Typ. 16 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 2.

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