FQH90N10V2 Datasheet | Fairchild Semiconductor

Features - 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V - Low gate charge ( typical 147 n C) - Low Crss ( typical 300 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - 175°C maximum junction temperature rating ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. TO-247 FQH Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 100 105 78 420 ±30 2430 105 33 4.5 330 2.2 -55 to +175 300 Unit V A A A V m J A m J V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.45 -40 Unit °C/W °C/W...