FQH90N15 Datasheet | Fairchild Semiconductor

Features - 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V - Low gate charge (typical 220 n C) - Low Crss (typical 200 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - 175°C maximum junction temperature rating QFET Description October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. { z G { G D S z z TO-247 FQH Series TO-3P G DS FQA Series { S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQH90N15/FQA90N15 150 90 63.5 360 ±25 1400 90 37.5 6.0 375 2.5 -55 to +175 300 Unit V A A A V m J A m J V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol...