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FQI140N03L - 30V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V.
  • Low gate charge ( typical 73 nC).
  • Low Crss ( typical 580 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating DD ! GS D2-PAK FQB Series GDS I2-PAK FQI Series " !" G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage.

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Part Number Description
FQI14N15 150V N-Channel MOSFET
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Full PDF Text Transcription

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FQB140N03L / FQI140N03L FQB140N03L / FQI140N03L 30V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. Features • 140A, 30V, RDS(on) = 0.
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