FQI16N25C Datasheet | Fairchild Semiconductor

Features - 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V - Low gate charge ( typical 41n C) - Low Crss ( typical 68p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQB16N25C / FQI16N25C 250 15.6 9.8 62.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)- Power Dissipation (TC = 25°C) - Derate above 25°C 410 15.6 13.9 5.5 3.13 139 1.11 -55 to +150 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics...