FQI5N50C Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FQI5N50C - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D Swww. DataSheet4U. com FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Curre.

Datasheet Details

Part number	FQI5N50C
Manufacturer	Fairchild Semiconductor
File Size	660.34 KB
Description	N-Channel MOSFET
Datasheet	FQI5N50C Datasheet
Additional preview pages of the FQI5N50C datasheet.

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Full PDF Text Transcription

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FQB5N50C/FQI5N50C QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 5A, 500V, RDS(on) = 1.

Published: May 4, 2007 |