FQI7N10 Datasheet PDF - Fairchild Semiconductor 100V N-Channel MOSFET Specs

FQI7N10 - 100V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

Datasheet Details

Part number	FQI7N10
Manufacturer	Fairchild Semiconductor
File Size	548.34 KB
Description	100V N-Channel MOSFET
Datasheet	FQI7N10 Datasheet
Additional preview pages of the FQI7N10 datasheet.

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Full PDF Text Transcription

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FQB7N10 / FQI7N10 December 2000 QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D TM Features • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.

Published: Apr 1, 2005 |