FQI7N10L Datasheet PDF - Fairchild Semiconductor 100V LOGIC N-Channel MOSFET Specs

FQI7N10L - 100V LOGIC N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirments allowing direct operationfrom logic drives D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR d.

Datasheet Details

Part number	FQI7N10L
Manufacturer	Fairchild Semiconductor
File Size	556.35 KB
Description	100V LOGIC N-Channel MOSFET
Datasheet	FQI7N10L Datasheet
Additional preview pages of the FQI7N10L datasheet.

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Full PDF Text Transcription

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FQB7N10L / FQI7N10L December 2000 QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D TM Features • • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.

Published: Apr 1, 2005 |