Datasheet Summary
FQB7N60 / FQI7N60
- N-Channel QFET® MOSFET
May 2014
FQB7N60 / FQI7N60
N-Channel QFET® MOSFET
600 V, 7.4 A, 1.0 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A
- Low Gate Charge (Typ. 29 nC)
- Low Crss (Typ. 16 pF)
-...
