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FQI7N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @VGS = 10 V, ID = 3.7 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 16 pF).
  • 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche En.

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Datasheet Details

Part number FQI7N60
Manufacturer Fairchild Semiconductor
File Size 885.94 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQI7N60 Datasheet
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Full PDF Text Transcription

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FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET May 2014 FQB7N60 / FQI7N60 N-Channel QFET® MOSFET 600 V, 7.4 A, 1.0 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ.
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