Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @VGS = 10 V, ID = 3.7 A.
- Low Gate Charge (Typ. 29 nC).
- Low Crss (Typ. 16 pF).
- 100% Avalanche Tested
D
D
G S
D2-PAK
GDS
I2-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche En.
FQI7N60 Datasheet
