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MOSFET – N-Channel, QFET
600 V, 7.4 A, 1.0 W
FQB7N60, FQI7N60
Description This N−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ.
FQI7N60 Datasheet
