FQI7N60 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FQI7N60
Manufacturer	ON Semiconductor
File Size	398.68 KB
Description	N-Channel MOSFET
Datasheet	FQI7N60 Datasheet
Additional preview pages of the FQI7N60 datasheet.

Product details

Description

This N Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

7.4 A, 600 V, RDS(on) = 1.0 W (Max. ) @ VGS = 10 V, ID = 3.7 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Aug 21, 2024 |