Datasheet Summary
FQB8N60C / FQI8N60C
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
- Low gate charge ( typical 28 nC)
- Low Crss (...
