Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
- Low gate charge ( typical 28 nC).
- Low Crss ( typical 12 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Curre.
FQI8N60C Datasheet
