FQI8N60C Datasheet PDF - Fairchild Semiconductor 600V N-Channel MOSFET Specs

FQI8N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 28 nC).
Low Crss ( typical 12 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curre.

Datasheet Details

Part number	FQI8N60C
Manufacturer	Fairchild Semiconductor
File Size	644.54 KB
Description	600V N-Channel MOSFET
Datasheet	FQI8N60C Datasheet
Additional preview pages of the FQI8N60C datasheet.

📁 Similar Datasheet

FQI8N60C - N-Channel MOSFET (ON Semiconductor)

FQI1N60 - 1.3A N-Channel MOSFET (OuCan)

FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)

FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)

FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)

FQI5N60C - N-Channel MOSFET (ON Semiconductor)

FQI7N60 - N-Channel MOSFET (ON Semiconductor)

Full PDF Text Transcription

Click to expand full text

FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 7.5A, 600V, RDS(on) = 1.

Published: Apr 1, 2005 |