Datasheet Details
| Part number | FQI8N60C |
|---|---|
| Manufacturer | onsemi |
| File Size | 754.28 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FQI8N60C Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A.
- Low Gate Charge (Typ. 28 nC).
- Low Crss (Typ. 12 pF).
- 100% Avalanche Tested.
- RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.