FQI8N60C - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FQI8N60C
Manufacturer	ON Semiconductor
File Size	754.28 KB
Description	N-Channel MOSFET
Datasheet	FQI8N60C Datasheet
Additional preview pages of the FQI8N60C datasheet.

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A.
Low Gate Charge (Typ. 28 nC).
Low Crss (Typ. 12 pF).
100% Avalanche Tested.
RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Dec 5, 2020 |