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FQL40N50 - 500V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 40 A, 500 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 20 A.
  • Low Gate Charge (Typ. 155 nC).
  • Low Crss (Typ. 95 pF).
  • 100% Avalanche Tested D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Curre.

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FQL40N50 — N-Channel QFET® MOSFET FQL40N50 N-Channel QFET® MOSFET 500 V, 40 A, 110 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 155 nC) • Low Crss (Typ. 95 pF) • 100% Avalanche Tested D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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