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FQL40N50 - N-Channel MOSFET

Features

  • High breakdown voltage.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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    isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQL40N50 ·FEATURES ·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·Power factor correction,motor drive and welding machine ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 40 IDM Drain Current-Single Pulsed 160 PD Total Dissipation @TC=25℃ 460 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.27 UNIT ℃/W isc website：www.
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