FQP10N20C Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
FQP10N20C Key Features
- 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
- Low Gate Charge (Typ. 20 nC)
- Low Crss (Typ. 40.5 pF)
- 100% Avalanche Tested
- Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
- Derate above 25oC
- Drain current limited by maximum junction temperature
- 55 to +150
- N-Channel QFET® MOSFET