FQP10N20C Datasheet | Fairchild Semiconductor

FQP10N20C / FQPF10N20C - N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features - 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A - Low Gate Charge (Typ. 20 nC) - Low Crss (Typ. 40.5 pF) - 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor...