| Part Number | FQP10N20C |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A * Low Gate Charge (Typ. 20 nC) * Low Crss (Typ. 40.5 pF) * 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This. |
FQP10N20C Datasheet
The FQP10N20C is a 200V N-Channel MOSFET.
| Part Number | FQP10N20C |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*With TO-220 packaging *High speed switching *Very high commutation ruggedness *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operationz *APPLICATIONS *PFC stages *LCD & PDP TV *Power supply *Switching applications INCHANGE Semiconducto. |