P10N20C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
P10N20C Key Features
- 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100%