Datasheet Details
| Part number | P10N20C |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 913.55 KB |
| Description | FQP10N20C |
| Datasheet |
 P10N20C Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.
Key Features
- 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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- G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.