FQP13N50 Overview
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 12.5 A, 500 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 6.25 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested D GDS TO-220 G
