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FQP19N20 - 200V N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max. ) @ VGS = 10 V, ID = 9.7 A.
  • Low Gate Charge (Typ. 31 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanch.

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Full PDF Text Transcription for FQP19N20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FQP19N20. For precise diagrams, and layout, please refer to the original PDF.

FQP19N20 — N-Channel QFET® MOSFET FQP19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchi...

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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. November 2013 Features • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute

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