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FQP19N20C - 200V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 19 A, 200 V, RDS(on) = 170 mΩ (Max. ) @ VGS = 10 V, ID = 9.5 A.
  • Low Gate Charge (Typ. 40.5 nC).
  • Low Crss (Typ. 85 pF).
  • 100% Avalanche Tested.

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Datasheet Details

Part number FQP19N20C
Manufacturer Fairchild Semiconductor
File Size 659.84 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet FQP19N20C Datasheet
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Full PDF Text Transcription

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FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET FQP19N20C / FQPF19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Features • 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 40.5 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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