FQP2N60C
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A
- Low Gate Charge (Typ. 8.5 nC)
- Low Crss (Typ. 4.3 pF)
- 100% Avalanche Tested
- GDS TO-220 GDS TO-220F G S
