FQP32N12V2 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and...
FQP32N12V2 Key Features
- 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 70 pF) Fast switching 100% a