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FQP3N30 - 300V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.6 A.
  • Low Gate Charge (Typ. 5.5 nC).
  • Low Crss (Typ. 6 pF).
  • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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Datasheet Details

Part number FQP3N30
Manufacturer Fairchild Semiconductor
File Size 673.84 KB
Description 300V N-Channel MOSFET
Datasheet download datasheet FQP3N30 Datasheet
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Full PDF Text Transcription

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FQP3N30 — N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.2 A, 2.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. November 2013 Features • 3.2 A, 300 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.6 A • Low Gate Charge (Typ. 5.5 nC) • Low Crss (Typ. 6 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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