FQP3N60C Datasheet | Fairchild Semiconductor

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features - 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A - Low Gate Charge (Typ. 10.5 n C) - Low Crss (Typ. 5.0 p F) - 100% Avalanche Tested GD S TO-220 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage TC = 25°C unless otherwise noted. Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 600 3 1.8 12 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V m J A m J V/ns W W/°C °C °C Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C 150 3 7.5 4.5 75 0.62 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FQP3N60C 1.67 62.5 Unit o C/W ©2006 Fairchild Semiconductor Corporation FQP3N60C Rev C1 .fairchildsemi. - N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP3N60C Top Mark FQP3N60C Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) g FS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr...