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FQP3N60C - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 10.5 nC).
  • Low Crss (Typ. 5.0 pF).
  • 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage TC = 25°C unless otherwise noted. Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQP3N60C 600 3 1.8 12 ±30 (Note.

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Datasheet Details

Part number FQP3N60C
Manufacturer Fairchild Semiconductor
File Size 1.08 MB
Description N-Channel MOSFET
Datasheet download datasheet FQP3N60C Datasheet
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FQP3N60C — N-Channel QFET® MOSFET December 2013 FQP3N60C N-Channel QFET® MOSFET 600 V, 3.0 A, 3.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 10.5 nC) • Low Crss (Typ. 5.
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