FQP4N90C
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A
- Low Gate Charge (Typ. 17 nC)
- Low Crss (Typ. 5.6 pF)
- 100% Avalanche Tested
- GDS TO-220 GDS TO-220F G S
