Datasheet Summary
December 2000
QFET
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters.
Features
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- - -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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