Download the FQP6N80C datasheet PDF.
This datasheet also covers the FQPF6N80C variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
5.5 A, 800 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V.
Note: The manufacturer provides a single datasheet file (FQPF6N80C-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for FQP6N80C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FQP6N80C. For precise diagrams, and layout, please refer to the original PDF.
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features This N-Channel enhancemen...
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FET 800 V, 5.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ.
FQP6N80C Datasheet
