FQP7N80C Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQP7N80C n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQP7N80C
Manufacturer	Fairchild (now onsemi)
File Size	871.30 KB
Description	N-Channel MOSFET
Download	FQP7N80C Download (PDF)

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.

Key Features

6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A.
Low Gate Charge (Typ. 27 nC).
Low Crss (Typ. 10 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current.

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