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FQP85N06 Datasheet 60v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP85N06 May 2001 QFET FQP85N06 60V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

  • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dr.

More Datasheets from Fairchild (now onsemi)

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FQP8N80C 800V N-Channel MOSFET
FQP8N90C 900V N-Channel MOSFET
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FQP10N20 200V N-Channel MOSFET
FQP10N20C 200V N-Channel MOSFET
FQP10N20L 200V LOGIC N-Channel MOSFET
FQP10N50CF N-Channel MOSFET
FQP10N60C 600V N-Channel MOSFET

FQP85N06 Distributor