FQP8N25 Description
Features 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide...
FQP8N25 Key Features
- 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% a