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FQP8N25 - 250V N-Channel MOSFET

Key Features

  • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www. DataSheet4U. com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQP8N25 May 2000 QFET FQP8N25 250V N-Channel MOSFET General Description Features • • • • • • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.