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FQPF16N25C - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS = 10 V, ID = 7.8 A.
  • Low Gate Charge (Typ. 41 nC).
  • Low Crss (Typ. 68 pF).
  • 100% Avalanche Tested November 2013.

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Datasheet Details

Part number FQPF16N25C
Manufacturer Fairchild Semiconductor
File Size 388.29 KB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQPF16N25C Datasheet
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FQPF16N25C — N-Channel QFET® MOSFET FQPF16N25C N-Channel QFET® MOSFET 250 V, 15.6 A, 270 mΩ Features • 15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS = 10 V, ID = 7.8 A • Low Gate Charge (Typ. 41 nC) • Low Crss (Typ. 68 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
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