FQPF16N25C Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
FQPF16N25C Key Features
- 15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS = 10 V, ID = 7.8 A
- Low Gate Charge (Typ. 41 nC)
- Low Crss (Typ. 68 pF)
- 100% Avalanche Tested
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
- Derate Above 25oC
- Drain current limited by maximum junction temperature
- ± 30 410 15.6 13.9 5.5 43 0.34