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FQPF19N10 - 100V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 13.6 A, 100 V, RDS(on)=100 mΩ(Max. ) @VGS=10 V, ID=6.8 A.
  • Low Gate Charge (Typ. 19 nC).
  • Low Crss (Typ. 32 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-So.

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Datasheet Details

Part number FQPF19N10
Manufacturer Fairchild Semiconductor
File Size 1.30 MB
Description 100V N-Channel MOSFET
Datasheet download datasheet FQPF19N10 Datasheet
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FQPF19N10 — N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.6 A, 100 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ.
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