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FQPF32N12V2 - 120V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

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Datasheet Details

Part number FQPF32N12V2
Manufacturer Fairchild Semiconductor
File Size 857.88 KB
Description 120V N-Channel MOSFET
Datasheet download datasheet FQPF32N12V2 Datasheet
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FQP32N12V2/FQPF32N12V2 QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 32 A, 120V, RDS(on) = 0.
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