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FQPF3N25 - 250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.15 A.
  • Low Gate Charge (Typ. 4.0 nC).
  • Low Crss (Typ. 4.7 pF).
  • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF3N30 300V N-Channel MOSFET
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FQPF3N60 600V N-Channel MOSFET
FQPF3N80 800V N-Channel MOSFET
FQPF3N80C 800V N-Channel MOSFET
FQPF3N90 900V N-Channel MOSFET
FQPF30N06 60V N-Channel MOSFET
FQPF30N06L 60V LOGIC N-Channel MOSFET
FQPF32N12V2 120V N-Channel MOSFET
FQPF32N20C N-Channel QFET MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQPF3N25 — N-Channel QFET® MOSFET FQPF3N25 N-Channel QFET® MOSFET 250 V, 2.3 A, 2.2 Ω November 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. Features • 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A • Low Gate Charge (Typ. 4.0 nC) • Low Crss (Typ. 4.7 pF) • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted.