FQPF3N25 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch...
FQPF3N25 Key Features
- 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A
- Low Gate Charge (Typ. 4.0 nC)
- Low Crss (Typ. 4.7 pF)
- 100% Avalanche Tested