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FQPF3P20 - QFET P-CHANNEL

Features

  • BVDSS =.
  • 200V.
  • Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 6.0nC (Typ. ) Extended Safe Operating Area Lower RDS(ON): 2.06Ω (Typ. ) 1 2 3 RDS(ON) = 2.7Ω ID =.
  • 2.2A TO-220F 1. Gate 2. Drain 3. Source.

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Full PDF Text Transcription

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QFET P-CHANNEL FQPF3P20 FEATURES BVDSS = −200V • • • • • • • • Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06Ω (Typ.) 1 2 3 RDS(ON) = 2.7Ω ID = −2.2A TO-220F 1. Gate 2. Drain 3.
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