FQPF4N90 Datasheet 900v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF4N90 October 2001 QFET FQPF4N90 900V N-Channel MOSFET General.

Datasheet Details

Part number	FQPF4N90
Manufacturer	Fairchild (now onsemi)
File Size	621.35 KB
Description	900V N-Channel MOSFET
Datasheet	FQPF4N90_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F IRFS Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

FQPF4N90 Distributor

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