FQPF4N90C Datasheet 900v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	FQPF4N90C
Manufacturer	Fairchild (now onsemi)
File Size	1.18 MB
Description	900V N-Channel MOSFET
Datasheet	FQPF4N90C FQP4N90C Datasheet (PDF)

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

4.0 A, 900 V, RDS(on) = 4.2 Ω (Max. ) @ VGS = 10 V, ID = 2.0 A.
Low Gate Charge (Typ. 17 nC).
Low Crss (Typ. 5.6 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100.

FQPF4N90C Distributor

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