FQPF6N60C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
FQPF6N60C Key Features
- 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% ava