Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 2.2 A.
- Low Gate Charge (Typ. 29 nC).
- Low Crss (Typ. 16 pF).
- 100% Avalanche Tested
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Vol.
FQPF7N60 Datasheet
