FQPF7N60
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A
- Low Gate Charge (Typ. 29 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested
- GDS TO-220F G
