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FQPF7N80C - N-Channel MOSFET

Download the FQPF7N80C datasheet PDF. This datasheet also covers the FQP7N80C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A.
  • Low Gate Charge (Typ. 27 nC).
  • Low Crss (Typ. 10 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP7N80C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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FQPF7N65 7A N-Channel MOSFET Oucan Semi
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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF7N80 800V N-Channel MOSFET
FQPF7N10 100V N-Channel MOSFET
FQPF7N10 100V LOGIC N-Channel MOSFET
FQPF7N10L 100V LOGIC N-Channel MOSFET
FQPF7N20 200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ.