FQPF9N25C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A
- Low Gate Charge (Typ. 26.5 nC)
- Low Crss (Typ. 45.5 pF)
- 100% Avalanche Tested
