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FQPF9N25CT - N-Channel QFET MOSFET

Download the FQPF9N25CT datasheet PDF. This datasheet also covers the FQPF9N25C variant, as both devices belong to the same n-channel qfet mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max. ) @ VGS = 10 V, ID = 4.4 A.
  • Low Gate Charge (Typ. 26.5 nC).
  • Low Crss (Typ. 45.5 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQPF9N25C-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF9N25C N-Channel QFET MOSFET
FQPF9N25 250V N-Channel MOSFET
FQPF9N08 80V N-Channel MOSFET
FQPF9N08L 80V LOGIC N-Channel MOSFET
FQPF9N15 150V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET November 2013 FQPF9N25C / FQPF9N25CT N-Channel QFET® MOSFET 250 V, 8.8 A, 430 mΩ Features • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A • Low Gate Charge (Typ. 26.5 nC) • Low Crss (Typ. 45.5 pF) • 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.