FQPF9N25CT Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch...
FQPF9N25CT Key Features
- 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A
- Low Gate Charge (Typ. 26.5 nC)
- Low Crss (Typ. 45.5 pF)
- 100% Avalanche Tested
- Derate Above 25oC
- (Note 1)
- Continuous (TC = 100oC)
- Pulsed
- Continuous (TC = 25oC)
- Drain current limited by maximum junction temperature