FQS4900 Overview
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. This device is well suited for high interface in telephone sets.
FQS4900 Key Features
- Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC)
- Fast switching
- Improved dv/dt capability