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FQS4900 - Dual N & P-Channel/ Logic Level MOSFET

Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • N-Channel 1.3A, 60V, RDS(on) = 0.55 Ω @ VGS = 10 V RDS(on) = 0.65 Ω @ VGS = 5 V P-Channel -0.3A, -300V, RDS(on) = 15.5 Ω @ VGS = -10 V RDS(on) = 16 Ω @ VGS =- 5 V.
  • Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC).
  • Fast switching.
  • Improved dv/dt capability 5 ! ! 4 "! ! ! D2 D2 D1 D1 6 3 G2 S2 G1 S1 7 ! ! 2 # $ ! ! 8 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TA = 25°C unless otherwise noted P.

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Full PDF Text Transcription

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FQS4900 August 2000 QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high interface in telephone sets. TM Features • N-Channel 1.3A, 60V, RDS(on) = 0.55 Ω @ VGS = 10 V RDS(on) = 0.65 Ω @ VGS = 5 V P-Channel -0.3A, -300V, RDS(on) = 15.5 Ω @ VGS = -10 V RDS(on) = 16 Ω @ VGS =- 5 V • Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.
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