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FQU11P06 - 60V P-Channel MOSFET

Datasheet Summary

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -9.4 A, -60 V, RDS(on) = 185 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 45 pF).
  • 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche En.

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Datasheet Details

Part number FQU11P06
Manufacturer Fairchild Semiconductor
File Size 1.22 MB
Description 60V P-Channel MOSFET
Datasheet download datasheet FQU11P06 Datasheet
Additional preview pages of the FQU11P06 datasheet.

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Full PDF Text Transcription

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FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET FQD11P06 / FQU11P06 P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Januray 2014 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. Features • -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ.
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