Datasheet4U Logo Datasheet4U.com

FQU11P06 - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

📥 Download Datasheet

Datasheet Details

Part number FQU11P06
Manufacturer VBsemi
File Size 158.78 KB
Description P-Channel MOSFET
Datasheet download datasheet FQU11P06 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQU11P06 60V P-Channel MOSFET Fairchild Semiconductor
FQU10N20 200V N-Channel MOSFET Fairchild Semiconductor
FQU10N20 N-Channel MOSFET INCHANGE
FQU10N20C 200V N-Channel MOSFET Fairchild Semiconductor
FQU10N20L 200V LOGIC N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by VBsemi

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQU11P06-VB FQU11P06-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A)a - 20 - 18 Qg (Typ.) 40 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-251 S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.