Datasheet4U Logo Datasheet4U.com

FQU11P06 - P-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

📥 Download Datasheet

Datasheet preview – FQU11P06

Datasheet Details

Part number FQU11P06
Manufacturer VBsemi
File Size 158.78 KB
Description P-Channel MOSFET
Datasheet download datasheet FQU11P06 Datasheet
Additional preview pages of the FQU11P06 datasheet.

📁 Similar Datasheet

  • FQU11P06 - 60V P-Channel MOSFET (Fairchild Semiconductor)
  • FQU10N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU10N20C - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • FQU10N20L - 200V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
  • FQU12N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • FQU12N20L - 200V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
  • FQU12P10 - 100V P-Channel MOSFET (Fairchild Semiconductor)
  • FQU13N06L - N-Channel QFET MOSFET (Fairchild Semiconductor)
  • FQU13N10 - 100V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by VBsemi

    Full PDF Text Transcription

    Click to expand full text
    FQU11P06-VB FQU11P06-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A)a - 20 - 18 Qg (Typ.) 40 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-251 S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
    Published: |