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FQU13N06L - N-Channel QFET MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (T.

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Datasheet Details

Part number FQU13N06L
Manufacturer Fairchild Semiconductor
File Size 1.44 MB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQU13N06L Datasheet
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FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.
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