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FQU1N80 Datasheet 800v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

  • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V Low gate charge ( typical 5.5nC) Low Crss ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

More Datasheets from Fairchild (now onsemi)

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FQU10N20C 200V N-Channel MOSFET
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FQU1N80 Distributor