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FQU2N60C Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD2N60C / FQU2N60C QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

  • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FQU2N60C N-Channel MOSFET ON Semiconductor

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FQU2N60C Distributor