FQU2N60C Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - - - - - - 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 n C) Low Crss ( typical 4.3 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - D-PAK FQD Series I-PAK FQU Series G! ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD2N60C / FQU2N60C 600 1.9 1.14 7.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)- Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient- Thermal Resistance, Junction-to-Ambient Typ ---Max 2.87 50 110 Units °C/W °C/W °C/W - When mounted on the minimum pad size remended (PCB...