Datasheet4U Logo Datasheet4U.com

FQU2N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.

📥 Download Datasheet

Datasheet preview – FQU2N60C

Datasheet Details

Part number FQU2N60C
Manufacturer Fairchild Semiconductor
File Size 970.61 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQU2N60C Datasheet
Additional preview pages of the FQU2N60C datasheet.

📁 Similar Datasheet

  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU1N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)
  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQU4N60C - 4A 600V N-Channel MOSFET (HAOHAI)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD2N60C / FQU2N60C QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.
Published: |