FQU2N60C Description
MOSFET N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,...
FQU2N60C Key Features
- 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A
- Low Gate Charge (Typ. 8.5 nC)
- Low Crss (Typ. 4.3 pF)
- 100% Avalanche Tested
- These Devices are Halid Free and are RoHS pliant
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
- Power Dissipation (TC = 25°C)
- Derate above 25°C