FQU2N60C
FQU2N60C is N-Channel MOSFET manufactured by onsemi.
Features
- 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A
- Low Gate Charge (Typ. 8.5 n C)
- Low Crss (Typ. 4.3 p F)
- 100% Avalanche Tested
- These Devices are Halid Free and are Ro HS pliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Value Unit
VDSS Drain- Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current
- Pulsed
(Note 1)
VGSS Gate- Source Voltage
±30
EAS Single Pulsed Avalanche Energy (Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy (Note 1)
4.4 dv/dt Peak Diode Recovery dv/dt
(Note 3)
A V m J A m J V/ns
Power Dissipation (TA = 25°C)
- Power Dissipation (TC = 25°C)
- Derate above...
