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FQU2N90 Datasheet 900v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 0.85 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol.
  •  4 4.
  •  < 4 < !5 8     Parameter    .
  •              0,-2.

More Datasheets from Fairchild (now onsemi)

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FQU2N60 600V N-Channel MOSFET
FQU2N60C 600V N-Channel MOSFET
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