Datasheet4U Logo Datasheet4U.com

FQU2N90 - 900V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 0.85 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol.
  •  4 4.
  •  < 4 < !5 8     Parameter    .
  •              0,-2.

📥 Download Datasheet

Datasheet preview – FQU2N90

Datasheet Details

Part number FQU2N90
Manufacturer Fairchild Semiconductor
File Size 1.35 MB
Description 900V N-Channel MOSFET
Datasheet download datasheet FQU2N90 Datasheet
Additional preview pages of the FQU2N90 datasheet.

📁 Similar Datasheet

  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU1N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)
  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQU4N60C - 4A 600V N-Channel MOSFET (HAOHAI)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω January 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 0.85 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 5.
Published: |